[D-8-2] Non-Volatile Metal-Ferroelectric-Insulator-Semiconductor(MFIS)FETs Using PLZT/STO/Si(100) Structures

Eisuke Tokumitsu、Ryo-ichi Nakamura、Hiroshi Ishiwara (1.Precision & Intelligence Lab. Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1996.D-8-2