[LPC-1] High Energy B Implantation for Fe Gettering; Evaluation of 7.5 nm Thick Gate Oxide Reliability

K. Hamada、D. J. Eaglesham、T. Hayashi、J. M. Poate、S. Saito (1.ULSI Device Dev. Labs., NEC Corp.、2.Lucent Technologies)

https://doi.org/10.7567/SSDM.1996.LPC-1