CBE Grown (GaIn)(AsP) Laser Diodes for Monolithic Integration

H. Kratzer; A. Nutsch; B. Torabi; G. Trankle; G. Weimann

doi:https://doi.org/10.7567/SSDM.1996.LPD-2

1996 International Conference on Solid State Devices and Materials

Aug 26, 1996 - Aug 29, 1996
Pacifico Yokohama, Yokohama, Japan

[LPD-2] CBE Grown (GaIn)(AsP) Laser Diodes for Monolithic Integration

H. Kratzer, A. Nutsch, B. Torabi, G. Trankle, G. Weimann (1.Walter-Schottky-Institut, TU Munchen, 2.Fraunhofer-Institut fur Angewandte Festkorperphysik)

https://doi.org/10.7567/SSDM.1996.LPD-2

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