Characterization of Undoped a-Si:H by Charge Deep-Level Transient Spectroscopy

Rudolf DURNY; Vojtech NADAZDY; Ilja THURZO

doi:https://doi.org/10.7567/SSDM.1996.PC-2-2

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜 1996年8月29日
Pacifico Yokohama, Yokohama, Japan

[PC-2-2] Characterization of Undoped a-Si:H by Charge Deep-Level Transient Spectroscopy

Rudolf DURNY、Vojtech NADAZDY、Ilja THURZO (1.Department of Physics, Faculty of Electrical Engineering, Slovak Technical University、2.Institute of Physics, Slovak Academy of Sciences)

https://doi.org/10.7567/SSDM.1996.PC-2-2

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