0.8μm CMOS Process Compatible 60V - 100mΩ・mm2 Power MOSFET on Bonded SOI

Yusuke KAWAGUCHI; Yoshihiro YAMAGUCHI; Hideyuki FUNAKI; Yoshinori TERAZAKI; Akio NAKAGAWA

doi:https://doi.org/10.7567/SSDM.1996.PC-3-5

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜 1996年8月29日
Pacifico Yokohama, Yokohama, Japan

[PC-3-5] 0.8μm CMOS Process Compatible 60V - 100mΩ・mm2 Power MOSFET on Bonded SOI

Yusuke KAWAGUCHI、Yoshihiro YAMAGUCHI、Hideyuki FUNAKI、Yoshinori TERAZAKI、Akio NAKAGAWA (1.Materials and Devices Research Laboratories, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1996.PC-3-5

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