A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET

M. Arai; T. Nakabayashi; T. Yabu; I. Matsuo; A. Kanda; M. Ogura

doi:https://doi.org/10.7567/SSDM.1996.PC-4-5

[PC-4-5] A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET

M. Arai、T. Nakabayashi、T. Yabu、I. Matsuo、A. Kanda、M. Ogura (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.、2.Kyoto Research Laboratory, Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1996.PC-4-5

1996 International Conference on Solid State Devices and Materials

[PC-4-5] A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET