The Japan Society of Applied Physics

[PC-4-5] A Universal Relationship between Boron Penetration and Gate Oxide Reliability for Surface Channel PMOSFET

M. Arai、T. Nakabayashi、T. Yabu、I. Matsuo、A. Kanda、M. Ogura (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.、2.Kyoto Research Laboratory, Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1996.PC-4-5