Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors

[PC-6-2] Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors

Kiyoshi OUCHI, Tomoyoshi MISHIMA, Kazuhiro MOCHIZUKI, Tohru OKA, Tomonori TANOUE (1.Central Research Laboratory, Hitachi, Ltd.)