Noise Parameter Extraction of GaAs MESFET with Monte-Carlo Simulation

J. M. Baek; Y. S. Kwon; S. Hong

doi:https://doi.org/10.7567/SSDM.1996.PC-6-3

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜 1996年8月29日
Pacifico Yokohama, Yokohama, Japan

[PC-6-3] Noise Parameter Extraction of GaAs MESFET with Monte-Carlo Simulation

J. M. Baek、Y. S. Kwon、S. Hong (1.Opto-Electronics Research Center Department of Electrical Engineering Korea Advanced Institute of Science and Technology)

https://doi.org/10.7567/SSDM.1996.PC-6-3

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