[PC-8-1] Platinum-Enhanced Oxidation of Silicon: Formation of MOS Structure below 300℃

H. Kobayashi、T. Yuasa、H. Kawa、Y. Nakato、K. Yoneda (1.PRESTO, Research Development Corporation of Japan、2.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University、3.Kyoto Research Laboratory, Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1996.PC-8-1