[PC-8-1] Platinum-Enhanced Oxidation of Silicon: Formation of MOS Structure below 300℃

H. Kobayashi, T. Yuasa, H. Kawa, Y. Nakato, K. Yoneda (1.PRESTO, Research Development Corporation of Japan, 2.Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of Organic Materials, Osaka University, 3.Kyoto Research Laboratory, Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1996.PC-8-1