[PC-8-6] Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD

Takahiro TAMURA、Youichi INOUE、Makoto SATOH、Hikaru YOSHITAKA、Junro SAKAI (1.Semiconductor Equipment Division, Anelva Corporation)

https://doi.org/10.7567/SSDM.1996.PC-8-6