Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface

Hiroshi NOHIRA; Yohichi OKUBE; Etsuo IIJIMA; Hiroshi YAMAMOTO; Naoto TATE; Masatake KATAYAMA; Takeo HATTORI

doi:https://doi.org/10.7567/SSDM.1996.PD-1-1

[PD-1-1] Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface

Hiroshi NOHIRA、Yohichi OKUBE、Etsuo IIJIMA、Hiroshi YAMAMOTO、Naoto TATE、Masatake KATAYAMA、Takeo HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology、2.Shin-Etsu Handotai Co. Ltd.)

https://doi.org/10.7567/SSDM.1996.PD-1-1

1996 International Conference on Solid State Devices and Materials

[PD-1-1] Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface