[PD-1-3] Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P+-Poly-Si Gate of PMOSFET's

T. S. Chao, C. H. Chien, C. P. Hao, M. C. Liaw, C. H. Chu, C. Y. Chang, T. F. Lei (1.National Nano Device Laboratories, 2.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University)

https://doi.org/10.7567/SSDM.1996.PD-1-3