Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide Reliability

Yoshimi SHIRAMIZU; Masaru TANAKA; Shinya YAMASAKI; Masaharu NAKAMORI; Nahomi AOTO; Hiroshi KITAJIMA

doi:https://doi.org/10.7567/SSDM.1996.PD-1-8

1996 International Conference on Solid State Devices and Materials

Aug 26, 1996 - Aug 29, 1996
Pacifico Yokohama, Yokohama, Japan

[PD-1-8] Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide Reliability

Yoshimi SHIRAMIZU, Masaru TANAKA, Shinya YAMASAKI, Masaharu NAKAMORI, Nahomi AOTO, Hiroshi KITAJIMA (1.ULSI Device Development Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1996.PD-1-8

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