Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation

[Sympo.II-8] Proposal of a Single-Transistor-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on Interference Problem in Write Operation

Hiroshi ISHIWARA, Toshishige SHIMAMURA, Eisuke TOKUMITSU (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)