Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas

Seiya KASAI; Kei-ichiroh JINUSHI; Hiroshi OKADA; Hidemasa TOMOZAWA; Tamotsu HASHIZUME; Hideki HASEGAWA

doi:https://doi.org/10.7567/SSDM.1996.Sympo.III-5

[Sympo.III-5] Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas

Seiya KASAI、Kei-ichiroh JINUSHI、Hiroshi OKADA、Hidemasa TOMOZAWA、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1996.Sympo.III-5

1996 International Conference on Solid State Devices and Materials

[Sympo.III-5] Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas