Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode

Christoph WIRNER; Yuji AWANO; Toshiro FUTATSUGI; Naoki YOKOYAMA Tadashi NAKAGAWA; Hiroshi BANDO Shunichi MUTO

doi:https://doi.org/10.7567/SSDM.1996.Sympo.IV-14

[Sympo.IV-14] Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode

Christoph WIRNER、Yuji AWANO、Toshiro FUTATSUGI、Naoki YOKOYAMA Tadashi NAKAGAWA、Hiroshi BANDO Shunichi MUTO (1.Fujitsu Ltd., Fujitsu Laboratories Ltd.、2.Electrotechnical Laboratory、3.Hokkaido University, Faculty of Engineering)

https://doi.org/10.7567/SSDM.1996.Sympo.IV-14

1996 International Conference on Solid State Devices and Materials

[Sympo.IV-14] Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode