MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate

Akihiko ISHIBASHI; Hidemi TAKEISHI; Nobuyuki UEMURA; Masahiro KUME; Yuzaburoh BAN

doi:https://doi.org/10.7567/SSDM.1996.Sympo.V-8

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜 1996年8月29日
Pacifico Yokohama, Yokohama, Japan

[Sympo.V-8] MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate

Akihiko ISHIBASHI、Hidemi TAKEISHI、Nobuyuki UEMURA、Masahiro KUME、Yuzaburoh BAN (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1996.Sympo.V-8

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