MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate

Akihiko ISHIBASHI; Hidemi TAKEISHI; Nobuyuki UEMURA; Masahiro KUME; Yuzaburoh BAN

doi:https://doi.org/10.7567/SSDM.1996.Sympo.V-8

[Sympo.V-8] MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate

Akihiko ISHIBASHI, Hidemi TAKEISHI, Nobuyuki UEMURA, Masahiro KUME, Yuzaburoh BAN (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1996.Sympo.V-8

1996 International Conference on Solid State Devices and Materials

[Sympo.V-8] MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate