Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching

Hiroyuki Komeda; Tohru Ueda; Sakae Wada; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.1997.A-13-2

[A-13-2] Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching

Hiroyuki Komeda、Tohru Ueda、Sakae Wada、Tadahiro Ohmi (1.Department of Electronic Engineering, Tohoku University、2.Process development Center, Sharp Corporation)

https://doi.org/10.7567/SSDM.1997.A-13-2

1997 International Conference on Solid State Devices and Materials

[A-13-2] Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching