[P-1] Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors -Seeking Blue Emission-

Isamu Akasaki (1.Department of Electrical and Electronic Engineering, Meijo University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[P-2] Silicon-Based IC Technology for Giga-Scale Integration Era

Yoshio Nishi (1.Texas Instruments Incorporated)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-1-1] Reliability and Scaling of Thin Gate Oxide

Chenming Hu (1.Dept. of Electrical Engineering & Computer Sciences, University of California)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] Root Cause Analysis of Thin Gate Oxide Degradation during Fabrication of Advanced CMOS ULSI Circuits

Sang U. Kim (1.Sematech)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Molecular Orbital Theory Examination into the Improvement of Gate Oxide Integrity with the Incorporation of Nitrogen and Fluorine

Takuya Maruizumi, Jiro Ushio, Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Hopping-Conduction Energy of Holes in SiO2 Determined Accurately by Molecular Orbital Calculation

Yoshiaki Takemura, Jiro Ushio, Takuya Maruizumi, Masanobu Miyao (1.Central Research Laboratory, Hitachi Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Highly Reliable SiO2 Films Formed by UV-O2 Oxidation

Akinobu Teramoto, Kiyoteru Kobayashi, Yoshikazu Ohno, Makoto Hirayama (1.Mitsubishi Electric Corporation, ULSI Laboratory)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Highly Reliable Interpoly Oxide Using ECR N2O-Plasma for Next Generation Flash Memory

Nae-In Lee, Jin-Woo Lee, Sung-Hoi Hur, Hyoung-Sub Kim, Chul-Hi Han (1.Department of Electrical Engineering, KAIST, 2.Semiconductor R & D Center, Samsung Electronics Co. Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure

Kohichi Morino, Seiichi Miyazaki, Masataka Hirose (1.Department of Electrical Engineering, Hiroshima University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Electron Beam Induced Damage of MOS Gate Oxide

Morikazu Konishi, Michitaka Kubota, Kaoru Koike (1.Basic Process Technology Department, Advanced Devices Department, ULSI R&D Labs., Semiconductor Co., Sory Corp.)

1997 International Conference on Solid State Devices and Materials |PDF Download