[A-6-3] Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process

Kazuhide Ino, Yoshiyuki Taniguchi, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET

Hideki Matsuhashi, Akio Gotoh, Chang-hun Lee, Michio Yokoyama, Kazuya Masu, Kazuo Tsubouchi (1.Research Institute of Electrical Communication, Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-6-5] Improvement of Bit-Line Contact Resistance for Memory Devices with Silicide Gate

T. H. Kim, Y. J. Choi, C. Y. Moon, H. C. Koh, J. H. Jin, B. I. Ryu (1.DRAM Product Engineering, Memory Business, Samsung Electronics)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-6-6] The Double-Metal Schottky Power Rectifier: An Adjustable Schottky Barrier Height Low-Power-Loss Diode

Shui Jinn Wang, Jiann Tyng Tzeng (1.Microelectronics Laboratory, Department of Electrical Engineering National Change Kung University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] SOI Device Technology for Low-Voltage and High-Performnce Portable Communication Systems

Alberto O. Adan, Toshio Naka, Atsushi Kagisawa (1.SHARP Corp., IC Group, VLSI Lab.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Monolithic 2 GHz and 4-6 GHz Low Noise Amplifiers Fabricated on a SIMOX Wafer

M. Harada, T. Tsukahara (1.NTT System Electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Dynamic Data Retention Degradation in FD-SOI DRAM Cells Due to Source-Induced Charge Accumulation(SICA) Effect

Jai-hoon Sim, Kinam Kim (1.Semiconductor R&D Center, Samsung Electronics Co.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-3-4] High Speed and Low Voltage Operation of CMOS Inverters Using SOI-MOSFET with Body Terminal

T. Matsumoto, N. Terao, S. Pidin, H. Kurino, M. Koyanagi (1.Department of Machine Intelligence and System Engineering, Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] Simulation on A Novel Sub-0.1 μm Body Driven SOI-MOSFET (BD-SOIMOS) for Small Logic Swing Operation

Risho Koh (1.Microelectronics Res. Labs. NEC Corp.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] A New Basic Element for Neural Logic Circuits

Yasuhisa Omura (1.Dept. of Electronics, Faculty of Engineering, Kansai University)

1997 International Conference on Solid State Devices and Materials |PDF Download

287 results (61 - 70)

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