[C-8-4] Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors

Mitsutoshi MIYASAKA, Hiroyuki OHSHIMA, Tatsuya SHIMODA (1.Seiko Epson Corporation, Base Technology Research Center)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-9-1] Improvement of Reliability of MOSFET's with N2O Nitrided Gate Oxide and N2O Polysilicon Gate Reoxidation

Chao Sung Lai, T. S. Chao, Tan Fu Lei, Cheng Len Lee, T. W. Huang, C. Y. Chang (1.National Nano Device Laboratory, 2.Department of Electronics Engineering, National Chiao Tung University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-9-2] New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFET's

C. M. Yih, C. L. Wang, Steve S. Chung, C. C. Wu, W. Tan, H. J. Wu, S. Pi, Daniel Huang (1.Department of Electronics Engineering, National Chiao Tung University, 2.Mosel-Vitelic)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-9-3] Temperature Effect on Off-State Drain Leakage Current in a Hot-Carrier Stressed n-MOSFET

T. E. Chang, L. P. Chiang, C. W. Liu, N. K. Zous, Tahui Wang (1.Department of Electronics Engineering, National Chiao-Tung University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-9-4] Study of Drain Contact Structure Dependent Deep Submicron MOSFET Reliability by Photon Emission Analysis

Sang-Gi Lee, Donghoon Lee, Kye-Nam Lee, Young-Jong Lee, Yungseon Eo, Ju-Young Jeong, Oh-Kyong Kwon, Chang-Hyo Lee (1.Dept. of Physics Hanyang Univ., 2.Dept. of Elec. Eng., Hanyang Univ., 3.Dept. of Elec. Eng., The Univ. of Suwon, 4.Advansed Technology Laboratory., LG Semicon Co.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-9-5] Short-Channel Effects in N- and P-Channel Polysilicon Thin Film Transistors with Very Thin ECR N2O-Plasma Gate Dielectrics

Jin-Woo Lee, Nae-In Lee, Chul-Hi Han (1.Dept. of E. E., KAIST)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-9-6] Metal Node Contact TFT SRAM Cell for High Speed, Low Voltage Applications

K. S. Son, S. W. Kwon, Y. J. Lee, Dae M. Kim (1.Department of Electrical Engineering, Pohang University of Science and Technology, 2.Semiconductor Research and Development Laboratory, Hyundai Electronics Industry Co., LTD.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-10-1] Highly Sensitive MOSFET Gas Sensors with Porous Platinum Gate Electrode

Hisashi Fukuda, Hiroaki Seo, Kouichirou Kasama, Toshiaki Endoh, Shigeru Nomura (1.Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-10-2] Evaluation of 0.3 μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application

Tomoko Matsudai, Mamoru Terauchi, Makoto Yoshimi, Norio Yasuhara, Yukihiro Ushiku, Akio Nakagawa (1.Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-10-3] A 600 mW-Output Power Amplifier for Cellular Applications Using APCVD-Grown SiGe Base HBT

T.-H. Han, B. R. Ryum, D.-H. Cho, S.-M. Lee (1.Semiconductor Div., Electronics and Telecommunications Research Institute(ETRI))

1997 International Conference on Solid State Devices and Materials |PDF Download