[C-13-3] Effects of Buffer Layer Structure in Poly Buffered LOCOS for Deep Submicron Silicon Devices

Jong-Ho Lee, Tae Moon Roh, Jong-Son Lyu, Bo Woo Kim, Hyung Joun Yoo (1.Semiconductor Technology Division, ETRI, 2.School of Electrical Eng. Wonkwang University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-13-4] Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Gap-Fill Oxide for Deep-Submicron CMOS Technologies

Seungho Lee, Kuchul Jung, Jeonghwan Son, Sungwoong Chung, Minchul Chae, Junyong Kim, Wouns Yang, Youngjong Lee, Jeongmo Hwang (1.Device Group, Process Group, Advanced Technology Lab., LG Semicon Co.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-11-1] Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGex Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy

Nobuyuki Sugii, Kiyokazu Nakagawa, Yoshinobu Kimura, Masanobu Miyao (1.Central Research Laboratory, Hitachi Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-11-2] Cl2 Influence on Si1-xGex Base Epitaxial Layer Growth for High Speed Bipolar Transistor

T. Aoyama, T. Tatsumi, S. Saito (1.ULSI Device Development Laboratories, NEC Corporation, 2.Microelectronics Research Laboratories, NEC Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-11-3] Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures

Yoshinobu Kimura, Kiyokazu Nakagawa, Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-11-4] Formation of Atomically Abrupt Si/Ge Hetero-Interface

Keiji Ikeda, Satoshi Sugahara, Yasutaka Uchida, Tomonori Nagai, Masakiyo Matsumura (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.Dept. of Electr. and Inform. Sci., Teikyo University of Science and Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-12-1] Effects of Segregated Ge on Electrical Properties of SiO2/SiGe Interface

C. G. Ahn, H. S. Kang, Y. K. Kwon, B. K. Kang (1.Pohang University of Science and Technology, Department of Electrical Engineering, 2.Uiduk University, Department of Electronics)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-12-2] Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE: Calculation Using a First-Principle Method

Jiro Ushio, Kiyokazu Nakagawa, Masanobu Miyao, Takuya Maruizumi (1.Central Research Laboratory, Hitachi, Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-12-3] Layer-by-Layer Oxidation of Si(001) Surfaces

Heiji Watanabe, Ken Fujita, Takaaki Kawamura, Masakazu Ichikawa (1.Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), 2.Department of Physics, Yamanashi University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-12-4] Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface

Atsushi Ando, Kunihiro Sakamoto, Kazushi Miki, Kazuhiko Matsumoto, Tsunenori Sakamoto (1.Electrotechnical Laboratory (ETL))

1997 International Conference on Solid State Devices and Materials |PDF Download