[C-13-4] Shallow Trench Isolation Characteristics with High-Density-Plasma (HDP) CVD Gap-Fill Oxide for Deep-Submicron CMOS Technologies

Seungho Lee, Kuchul Jung, Jeonghwan Son, Sungwoong Chung, Minchul Chae, Junyong Kim, Wouns Yang, Youngjong Lee, Jeongmo Hwang (1.Device Group, Process Group, Advanced Technology Lab., LG Semicon Co.)

https://doi.org/10.7567/SSDM.1997.C-13-4