[C-11-2] Impact of Shallow Source/Drain on Scaling pMOSFETs below 0.1 μm

H. Kurata, T. Sugii (1.Fujitsu Laboratories Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-11-3] A New Post-Metal Threshold Voltage Adjustment Scheme by Hydrogen Ion Implantation

Shinya Ito, Ko Noguchi, Tadahiko Horiuchi (1.ULSI Device Development Laboratories, NEC Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-11-4] High Performance 0.2 μm Dual Gate CMOS by Suppression of Transient-Enhanced-Diffusion Using Rapid Thermal Annealing Technologies

Y. Nishida, H. Sayama, S. Shimizu, T. Kuroi, A. Furukawa, A. Teramoto, T. Uchida, Y. Inoue, T. Nishimura (1.ULSI Laboratory and Advanced Technology R&D Center, Mitsubishi Electric Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-12-1] Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up

Hiroshi Fujioka, Kanta Ono, Yoshiyuki Sato, Chenming Hu, Masaharu Oshima (1.Department of Applied Chemistry, University of Tokyo, 2.NTT Laboratories, 3.University of California at Berkeley)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-12-2] Study of Indium Doping Effect on High Performance Sub-Quarter Micron NMOS: Vt Control and Pocket Implantation

M. TAKASE, K. YAMASHITA, B. MIZUNO (1.Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-12-3] Uniform Si-SEG and Ti/SEG-Si Thickness Ratio Control for Ti-Salicided Sub-Quarter-Micron CMOS Devices

Hitoshi Wakabayashi, Takeshi Andoh, Tohru Mogami, Toru Tatsumi, Takemitsu Kunio (1.Microelectronics Research Laboratories and ULSI Device Development Laboratories, NEC Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-12-4] Cell Transistor Design Using Self-Aligned Local Channel Implant(SALCI) for 4Gb DRAMs and Beyond

Daewon Ha, Jai-hoon Sim, Kinam Kim (1.Semiconductor R&D Center, Samsung Electronics Co.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-12-5] Gain-Determined Short-Channel Limit of MOSFETs

M. Fujishima, M. Ishii, K. Hoh (1.VLSI Design and Education Center, The University of Tokyo)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-13-1] Photoresist CMP for Shallow Trench Isolation

Akio Itoh, Masahiko Imai, Yoshihiro Arimoto (1.Electron Devices and Materials Lab., Fujitsu Laboratories Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-13-2] Optimization of Process Conditions for Quarter Micron Recessed Poly-Si Spacer LOCOS (RPSL) Isolation

S. J. Hong, D. H. Ahn, S. E. Kim, T. Park, Y. G. Shin, H. K. Kang, M. Y. Lee (1.Semiconductor Research Center, Samsung Electronics Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

287 results (251 - 260)

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