The Japan Society of Applied Physics

287 results (191 - 200)

[C-10-4] Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi2Ta2O9-Y2O3-Si Structure

Ho Nyung Lee, Yong Tae Kim, Chang Woo Lee, Myoung-Ho Lim, T. S. Kalkur (1.Semiconductor Materials Laboratory, Korea Institute of Science and Technology, 2.Department of Physics, Korea University, 3.Department of Electrical and Computer Eng., Colorado State University at Colorado Springs)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] The Analysis of Defective Cell Induced by COP in 0.3 microns Technology Node DRAM

Masaya Muranaka, Masashi Miura, Hidetoshi Iwai, Masao Kawamura, Yoshitaka Tadaki, Toshiyuki Kaeriyama (1.ULSI Development Dept., Hitachi ULSI Engineering Corp., 2.Device Development Center Hitachi Ltd., 3.Manufacturing Capability Development, Semiconductor Group, Texas Instruments Inc., located at Device Development Center, Hitachi Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

287 results (191 - 200)