[A-4-4] A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N2O Annealing

Fuh-Cheng Jong, Tiao-yuan Huang, Tien-Sheng Chao, Horng-Chih Lin, Len-Yi Leu, Konrad Young, Chen-Hsi Lin, Kuang Y. Chiu (1.Department of Electronic Engineering, National Chiao Tung University, 2.National Nano Device Laboratories, 3.Winbond Electronics Corp.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Dopant Diffusion in Si and SiO2 During Rapid Thermal Annealing

Richard B. Fair (1.Department of Electrical and Computer Engineering, Duke University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Calibration of TCAD Models for High Dose Impurity Diffusion

Osamu Nishio, Masahiro Takenaka, Eiji Aoki, Norio Mizukoshi, Katsumasa Fujii (1.VLSI Development Laboratories, SHARP Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Reduction of Junction Leakage Current Variation in MeV P Implant

T. Hayashi, K. Hamada, K. Miyoshi, N. Nishio, S. Saito (1.ULSI Device Development Laboratories, NEC Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping

Tsutomu Sato, Ichiro Mizushima, Yoshitaka Tsunashima (1.Microelectronics Engineering laboratory, Toshiba corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-5-5] Reduction of BF2+ -Implantation Dose to Minimize the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃

Kei Kanemoto, Akira Nakada, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-5-6] New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry

Takuya Sakamoto, Hiroyuki Nakano, Yoshinari Kamakura, Kenji Taniguchi, Kenji Nishi, Hiroto Nagano (1.Department of Electronics and Information Systems, Osaka University, 2.STARC)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-5-7] Deactivation of Boron in Highly Boron-Doped Silicon

I. Mizushima, Y. Mitani, M. Koike, M. Yoshiki, M. Tomita, S. Kambayashi (1.Microelectronics Engineering Laboratory, R&D Center Toshiba Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Novel Ultra Clean Salicide Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1 μm Gate Electrode

M. Nakano, H. Kotaki, K. Kataoka, S. Kakimoto (1.Central Research Laboratories, Sharp Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] Characterization of Corner Induced Leakage Current in Shallow Silicided n+/p Junction

Hi-Deok Lee, Jong-Wan Jung, Hyun-Sang Hwang, Kye-Nam Lee, Young-Jong Lee, Jeong-Mo Hwang (1.Advan. Tech. Lab., LG Semicon Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

287 results (51 - 60)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Next »

▲