[D-1-1] New Doping Method in Semiconductors Proposed by ab initio Electronic Structure Calculation

H. Katayama-Yoshida, T. Yamamoto (1.Department of Condensed Matter Physics The Institute of Scientific and Industrial Research Osaka University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates

Hiroshi Yamaguchi, Yoshiro Hirayama (1.NTT Basic Research Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Chemical Beam Epitaxy Growth and Characterization of Ga(In)NAs/GaAs

Kanji Takeuchi, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE

Hiroshi Okamoto, Kunishige Oe (1.NTT Opto-electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] RHEED Oscillation-Based Optimization of Growth Conditions for Gas-Source MBE Growth of InGaP Using Tertiarybutylphosphine

Hironobu Sai, Hajime Fujikura, Hideki Hasegawa (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-1-6] LPE Growth of (3GaAs)x{(3ZnSe)y(Ga2Se3)1-y}1-x Alloy

Masanori Kaji, Hironobu Katsuno, Masakazu Kimura, Akira Tanaka, Tokuzo Sukegawa (1.Research Institute of Electronics, Shizuoka University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-1-7] Polycrystalline CuGaSe2 Thin Films Growth by CVD with I2 as Transport Agent

A. Jager-Waldau, N. Meyer, T. Weiss, S. Fiechter, M. Ch. Lux-Steiner, K. Tempelhoff, W. Richter (1.Hahn-Meitner-Institut Berlin, 2.Institut fur Festkorperphysik PN 6-1, Technische Universitat Berlin)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation

Takuto Tsuji, Hiroo Yonezu, Mikihiro Yokozeki, Yasufumi Takagi, Naoki Ohshima (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] Band-Gap Narrowing in Carbon Doped GaAs with Various Substrate Orientations Studied by Photoluminescence Spectroscopy

S. Cho, D. Lee, E. K. Kim, S.-K. Min (1.Semiconductor Materials Research Center Korea Institute of Science and Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Atomic Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching

Kwang-Ki Choi, Tae-Yeon Seong, Dong-Ho Lee, Yong Sun Shon, Chung Tae Kim (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), 2.Memory R&D Division, Hyundai Electronics Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

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