[B-4-3] New Analytical Model for Subthreshold Current in Short-Channel Fully-Depleted SOI MOSFETs

Sergey Pidin, Mitsumasa Koyanagi (1.Department of Machine Intelligence and System Engineering, Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy

Yoshinao Miura, Kouichi Hamada, Tomohisa Kitano, Atsushi Ogura (1.Microelectronics Research Laboratories, NEC Corporation, 2.ULSI Device Development Laboratories, NEC Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] Suppressing Plasma Induced Degradation of Gate Oxide by Using Silicon-On-Insulator Structures

Kiyoshi Arita, Masashi Akamatsu, Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Precise Measurement of Strain in SOI Induced by Local Oxidation

Shigeru Kimura, Atsushi Ogura (1.Microelectronics Research Laboratories, NEC Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] Sub-0.25 μm Devices and 16K SRAM with Selective-Epi Source/Drain on Ultra-Thin SOI

C. Raynaud, O. Faynot, JL. Pelloie, J. Margail, V. Ferlet, A. Quemeneur, R. Westhoff, McD. Robinson (1.LETI(CEA-Grenoble), 2.CEA Bruyeres le Chatel, 3.LSRL)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-5-5] Epitaxial Si on Al2O3 Films Grow with O2 Gas by UHV-CVD Method

Takayuki Kimura, Atsuhiro Sengoku, Yoshitaka Moriyasu, Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films

Shin-ichi Takagi, Junji Koga, Akira Toriumi (1.Adavance Semiconductor Device Laboratories, Toshiba Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Phonon-Limited Electron Mobility in Ultra-Thin SOI MOSFETs

Masanari Shoji, Seiji Horiguchi (1.NTT Basic Research Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] Non-Stationary Electron/Hole Transport in Sub-0.1 μm MOS Devices -Degradation Mechanism and Low-Power Application-

R. Ohba, T. Mizuno (1.Research and Development Center, TOSHIBA Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] Reduction of the Floating-Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts

Mika NISHISAKA, Tanemasa ASANO (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

287 results (71 - 80)

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