[D-3-2] High Density Data Storage Using Micromachined Probes

H. J. Mamin, R. P. Ried, B. D. Terris, D. Rugar, B. W. Chui, T. K. Kenny (1.IBM Research Division, Almaden Research Center, 2.Departments of Electrical Engineering and Mechanical Engineering, Stanford University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-3-3] Theory of Atomic and Electronic Processes Induced by the Tip of SPM

Masaru Tsukada, Nobuhiko Kobayashi (1.Department of Physics, Graduate School of Science, University of Tokyo)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-4-1] Near-Field Optical Spectroscopy of Single Quantum Dots and Related Materials/Devices

Toshiharu Saiki, Ken-ichi Nishi, Motoichi Ohtsu (1.Kanagawa Academy of Science and Technology, 2.Opto-Electronics Research Laboratories, NEC Corporation, 3.Tokyo Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-4-2] Advanced Scanning Probe Methods for the Nanometer, Gigahertz Age

A. S. Hou (1.Park Science Instruments)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] Functional Probing of Nanodevices by Scanning Maxwell-Stress Microscopy

Hiroshi Yokoyama (1.Electrotechnical Laboratory)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] Terahertz Emission from Quantum Beats in Coupled Quantum Wells

Norihiko Sekine, Kazuhiko Hirakawa, Yasuhiko Arakawa (1.Institute of Industrial Science, University of Tokyo)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] Photocurrent and Photoluminescence Affected by Γ-X Electron Transfer in Type-I GaAs/AlAs Superlattices

Hidenori Mimura, Makoto Hosoda, Naoki Ohtani, Kuniyoshi Yokoo (1.Research Institute of Electrical Communication, Tohoku University, 2.ATR Optical and Radio Communication Research Laboratories, 3.ATR Adaptive Communications Research Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] Influence of Γ-X Resonance on Current-Voltage Characteristics in GaAs/InAlAs Strained Superlattices

Kazuyoshi Kuroyanagi, Naoki Ohtani, Norifumi Egami, Koji Tominaga, Masanobu Ando, Masaaki Nakayama (1.ATR Adaptive Communications Research Laboratories, 2.ATR Optical and Radio Communications Research Laboratories, 3.Department of Applied Physics, Osaka City University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-5-4] Γ-X Tunneling in GaAs/AlAs/GaAs Heterostructure

Yu. N. Khanin, E. E. Vdovin, K. S. Novoselov, Yu. V. Dubrovskii, T. G. Andersson, P. Omling, S.-B. Carlson (1.Institute of Microelectronics Technology and High Purity Material Russian Academy of Sciences, 2.Department of Physics, Chalmers University of Technology, 3.Lund University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-5-5] Observation of Resonances by Individual Energy Levels in InGaAs/AlAs Triple Barrier Resonant Tunneling Diodes

J. Jo, Y. I. Choi, D. M. Kim, K. Alt, K. L. Wang (1.Department of Electronics Engineering, Ajou University, 2.Department of Electronics Engineering, Kookmin University, 3.Department of Electrical Engineering, University of California)

1997 International Conference on Solid State Devices and Materials |PDF Download