The Japan Society of Applied Physics

[D-5-4] Γ-X Tunneling in GaAs/AlAs/GaAs Heterostructure

Yu. N. Khanin, E. E. Vdovin, K. S. Novoselov, Yu. V. Dubrovskii, T. G. Andersson, P. Omling, S.-B. Carlson (1.Institute of Microelectronics Technology and High Purity Material Russian Academy of Sciences, 2.Department of Physics, Chalmers University of Technology, 3.Lund University)

https://doi.org/10.7567/SSDM.1997.D-5-4