[B-10-5] In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface

Naohiro Tsurumi, Yasuhiko Ishikawa, Takashi Fukui, Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-10-6] Multi-Tunnelling Junctions of Metal Droplets Formed on CaF2 Stepedges by Self-Assembling Manner

Koji Kawasaki, Jun Takeshita, Kazuo Tsutsui (1.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-10-7] Delta-Doping of Si on GaAs Vicinal Surfaces and Its Possibility of Wirelike Incorporation in Metalorganic Vapor Phase Epitaxial Growth

Tomoki Irisawa, Junichi Motohisa, Masashi Akabori, Takashi Fukui (1.Research Center for Interface Quantum Electronics, Hokkaido University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-10-8] W/Cr/Au/SiO2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices

Hiroo Hongo, Yasuyuki Miyamoto, Jun Suzuki, Tetsuya Hattori, Atsushi Kokubo, Michihiko Suhara, Kazuhito Furuya (1.Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Research center for Quantum Effect Electronics, Tokyo Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-10-9] Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy

Takao Usunami, Masashi Arakawa, Shigeru Kishimoto, Takashi Mizutani Toshiaki Kagawa, Hidetoshi Iwamura (1.Department of Quantum Engineering, Nagoya University, 2.NTT Opto-electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-1] Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs (211)B

Shiping Guo, Hideo Ohno, Aidong Shen, Yuzo Ohno, Fumihiro Matsukura (1.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication Tohoku University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-2] Controlled Formation of Narrow and Uniform InGaAs Ridge Quantum Wire Arrays on Patterned InP Substrates by Selective Molecular Beam Epitaxy

Hajime Fujikura, Yuuki Hanada, Michio Kihara, Hideki Hasegawa (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-3] Vertical Quantum Confinement Effect on Optical Properties of Strain-Induced InGaP Quantum Dot Structure

S. J. Kim, H. Asahi, M. Takemoto, K. Asami, S. Gonda (1.The Institute of Scientific and Industrial Research, Osaka University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-4] Size Quantization in InAs/GaAs Self-Assembled Quantum Dots by Gas-Source Molecular Beam Epitaxy

Hong-Wen Ren, Kenichi Nishi, Shigeo Sugou, Yasuaki Masumoto (1.Single Quantum Dot Project, ERATO, JST, c/o NEC Corporation, 2.Opto-electronics Research Laboratories, NEC Corporation, 3.Institute of Physics, University of Tsukuba)

1997 International Conference on Solid State Devices and Materials |PDF Download

[B-11-5] AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Substrates Grown by Droplet Epitaxy

Takashi Egawa, Akira Ogawa, Takashi Jimbo, Masayoshi Umeno (1.Research Center for Micro-Structure Devices, Nagoya Institute of Technology, 2.Department of Electrical and Computer Engineering, Nagoya Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download