[A-13-2] Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching

Hiroyuki Komeda, Tohru Ueda, Sakae Wada, Tadahiro Ohmi (1.Department of Electronic Engineering, Tohoku University, 2.Process development Center, Sharp Corporation)

https://doi.org/10.7567/SSDM.1997.A-13-2