The Japan Society of Applied Physics

[A-14-4] Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low Energy Ion Bombardment Process

H. Kumami、W. Shindo、K. Ino、T. Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University、2.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1997.A-14-4