Electron Beam Induced Damage of MOS Gate Oxide

Morikazu Konishi; Michitaka Kubota; Kaoru Koike

doi:https://doi.org/10.7567/SSDM.1997.A-2-4

1997 International Conference on Solid State Devices and Materials

Sep 16, 1997 - Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan

[A-2-4] Electron Beam Induced Damage of MOS Gate Oxide

Morikazu Konishi, Michitaka Kubota, Kaoru Koike (1.Basic Process Technology Department, Advanced Devices Department, ULSI R&D Labs., Semiconductor Co., Sory Corp.)

https://doi.org/10.7567/SSDM.1997.A-2-4

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