[A-6-2] Characterization of Corner Induced Leakage Current in Shallow Silicided n+/p Junction

Hi-Deok Lee、Jong-Wan Jung、Hyun-Sang Hwang、Kye-Nam Lee、Young-Jong Lee、Jeong-Mo Hwang (1.Advan. Tech. Lab., LG Semicon Co., Ltd.)

https://doi.org/10.7567/SSDM.1997.A-6-2