[A-6-3] Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process

Kazuhide Ino、Yoshiyuki Taniguchi、Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.1997.A-6-3