Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy

Takao Usunami; Masashi Arakawa; Shigeru Kishimoto; Takashi Mizutani Toshiaki Kagawa; Hidetoshi Iwamura

doi:https://doi.org/10.7567/SSDM.1997.B-10-9

[B-10-9] Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy

Takao Usunami, Masashi Arakawa, Shigeru Kishimoto, Takashi Mizutani Toshiaki Kagawa, Hidetoshi Iwamura (1.Department of Quantum Engineering, Nagoya University, 2.NTT Opto-electronics Laboratories)

https://doi.org/10.7567/SSDM.1997.B-10-9

1997 International Conference on Solid State Devices and Materials

[B-10-9] Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy