Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy

Takao Usunami; Masashi Arakawa; Shigeru Kishimoto; Takashi Mizutani Toshiaki Kagawa; Hidetoshi Iwamura

doi:https://doi.org/10.7567/SSDM.1997.B-10-9

[B-10-9] Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy

Takao Usunami、Masashi Arakawa、Shigeru Kishimoto、Takashi Mizutani Toshiaki Kagawa、Hidetoshi Iwamura (1.Department of Quantum Engineering, Nagoya University、2.NTT Opto-electronics Laboratories)

https://doi.org/10.7567/SSDM.1997.B-10-9

1997 International Conference on Solid State Devices and Materials

[B-10-9] Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy