New Measurement Technique of Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs

T. Saraya; M. Takamiya; T. N. Duyet; T. Hiramoto

doi:https://doi.org/10.7567/SSDM.1997.B-4-4

[B-4-4] New Measurement Technique of Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs

T. Saraya、M. Takamiya、T. N. Duyet、T. Hiramoto (1.Institute of Industrial Science, University of Tokyo、2.VLSI Design and Education Center, Univ. of Tokyo)

https://doi.org/10.7567/SSDM.1997.B-4-4

1997 International Conference on Solid State Devices and Materials

[B-4-4] New Measurement Technique of Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs