[B-4-4] New Measurement Technique of Sub-Bandgap Impact Ionization Current by Transient Characteristics of Partially Depleted SOI MOSFETs

T. Saraya, M. Takamiya, T. N. Duyet, T. Hiramoto (1.Institute of Industrial Science, University of Tokyo, 2.VLSI Design and Education Center, Univ. of Tokyo)

https://doi.org/10.7567/SSDM.1997.B-4-4