Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy

Yoshinao Miura; Kouichi Hamada; Tomohisa Kitano; Atsushi Ogura

doi:https://doi.org/10.7567/SSDM.1997.B-5-1

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜 1997年9月19日
ACT CITY Hamamatsu, Hamamatsu, Japan

[B-5-1] Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy

Yoshinao Miura、Kouichi Hamada、Tomohisa Kitano、Atsushi Ogura (1.Microelectronics Research Laboratories, NEC Corporation、2.ULSI Device Development Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1997.B-5-1

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