Epitaxial Si on Al2O3 Films Grow with O2 Gas by UHV-CVD Method

Takayuki Kimura; Atsuhiro Sengoku; Yoshitaka Moriyasu; Makoto Ishida

doi:https://doi.org/10.7567/SSDM.1997.B-5-5

1997 International Conference on Solid State Devices and Materials

Sep 16, 1997 - Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan

[B-5-5] Epitaxial Si on Al2O3 Films Grow with O2 Gas by UHV-CVD Method

Takayuki Kimura, Atsuhiro Sengoku, Yoshitaka Moriyasu, Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

https://doi.org/10.7567/SSDM.1997.B-5-5

▲