Epitaxial Si on Al2O3 Films Grow with O2 Gas by UHV-CVD Method

Takayuki Kimura; Atsuhiro Sengoku; Yoshitaka Moriyasu; Makoto Ishida

doi:https://doi.org/10.7567/SSDM.1997.B-5-5

1997 International Conference on Solid State Devices and Materials

1997年9月16日〜 1997年9月19日
ACT CITY Hamamatsu, Hamamatsu, Japan

[B-5-5] Epitaxial Si on Al2O3 Films Grow with O2 Gas by UHV-CVD Method

Takayuki Kimura、Atsuhiro Sengoku、Yoshitaka Moriyasu、Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

https://doi.org/10.7567/SSDM.1997.B-5-5

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