[C-12-2] Study of Indium Doping Effect on High Performance Sub-Quarter Micron NMOS: Vt Control and Pocket Implantation

M. TAKASE、K. YAMASHITA、B. MIZUNO (1.Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1997.C-12-2