[C-4-7] Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP

Koichi Wakita、Isamu Kotaka、Ryuzo Iga、Susumu Kondo、Yoshio Noguchi (1.NTT Opto-electronics Laboratories)

https://doi.org/10.7567/SSDM.1997.C-4-7