High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy

Jun Wu; Hiroyuki Yaguchi; Kentaro Onabe; Yasuhiro Shiraki; Ryoichi Ito

doi:https://doi.org/10.7567/SSDM.1997.C-5-4

[C-5-4] High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy

Jun Wu、Hiroyuki Yaguchi、Kentaro Onabe、Yasuhiro Shiraki、Ryoichi Ito (1.Department of Applied Physics, The University of Tokyo、2.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

https://doi.org/10.7567/SSDM.1997.C-5-4

1997 International Conference on Solid State Devices and Materials

[C-5-4] High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy