Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process

Yuji Yamagata; Koji Fujiwara; Takayuki Sawada; Kazuaki Imai; Kazuhiko Suzuki; Isao Tsubono

doi:https://doi.org/10.7567/SSDM.1997.C-5-5

1997 International Conference on Solid State Devices and Materials

Sep 16, 1997 - Sep 19, 1997
ACT CITY Hamamatsu, Hamamatsu, Japan

[C-5-5] Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process

Yuji Yamagata, Koji Fujiwara, Takayuki Sawada, Kazuaki Imai, Kazuhiko Suzuki, Isao Tsubono (1.Department of Applied Electronics, Hokkaido Institute of Technology)

https://doi.org/10.7567/SSDM.1997.C-5-5

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