Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p+-ZnSe by Excimer Laser Doping Technique

Toru Aoki; Akira Ishibashi; Masaharu Nagai; Yoshinori Hatanaka

doi:https://doi.org/10.7567/SSDM.1997.C-5-7

[C-5-7] Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p+-ZnSe by Excimer Laser Doping Technique

Toru Aoki、Akira Ishibashi、Masaharu Nagai、Yoshinori Hatanaka (1.Graduate School of Electronic Science and Technology、2.Research Institute of Electronics, Shizuoka University、3.Sony Corporation Research Center)

https://doi.org/10.7567/SSDM.1997.C-5-7

1997 International Conference on Solid State Devices and Materials

[C-5-7] Ohmic Contact of p-Type ZnSe Using Heavily Alkaline Doped p+-ZnSe by Excimer Laser Doping Technique